The thickness dependence of the interband transition photovoltaic voltage and the short-circuit photocurrent in zinc sulphide photocells
Identifieur interne : 001673 ( France/Analysis ); précédent : 001672; suivant : 001674The thickness dependence of the interband transition photovoltaic voltage and the short-circuit photocurrent in zinc sulphide photocells
Auteurs : M. Arsalane [France] ; A. J. Tosser [France]Source :
- Thin Solid Films [ 0040-6090 ] ; 1977.
Abstract
Using previously proposed band models calculations are given to determine the open-circuit photovoltages Vpho and the short-circuit currents Iphsc that are induced by light with an energy of more than 3.66 eV in Al/ZnS/Au photocells. The assumption that the interband photo-transitions and the electronic photo-emission from coulombic centres are separate may be used for sulphide thicknesses of more than 200 Å; the variations of Vpho and Iphsc with light intensity are only attributed to the interband transition. For sulphide thicknesses less than 200 Å the conduction band is perturbed twice because of the critical layer; photo-emission from the coulombic centres is enhanced; experimental thickness dependences are proposed that deviate markedly from the theoretical laws.
Url:
DOI: 10.1016/0040-6090(77)90419-9
Affiliations:
Links toward previous steps (curation, corpus...)
- to stream Istex, to step Corpus: 000923
- to stream Istex, to step Curation: 000923
- to stream Istex, to step Checkpoint: 001633
- to stream Main, to step Merge: 002B68
- to stream Main, to step Curation: 002A88
- to stream Main, to step Exploration: 002A88
- to stream France, to step Extraction: 001673
Links to Exploration step
ISTEX:C5995C0259F97148C443977DEE01EBDE65F4DDF0Le document en format XML
<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title>The thickness dependence of the interband transition photovoltaic voltage and the short-circuit photocurrent in zinc sulphide photocells</title><author><name sortKey="Arsalane, M" sort="Arsalane, M" uniqKey="Arsalane M" first="M." last="Arsalane">M. Arsalane</name></author><author><name sortKey="Tosser, A J" sort="Tosser, A J" uniqKey="Tosser A" first="A. J." last="Tosser">A. J. Tosser</name></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:C5995C0259F97148C443977DEE01EBDE65F4DDF0</idno><date when="1977" year="1977">1977</date><idno type="doi">10.1016/0040-6090(77)90419-9</idno><idno type="url">https://api.istex.fr/document/C5995C0259F97148C443977DEE01EBDE65F4DDF0/fulltext/pdf</idno><idno type="wicri:Area/Istex/Corpus">000923</idno><idno type="wicri:Area/Istex/Curation">000923</idno><idno type="wicri:Area/Istex/Checkpoint">001633</idno><idno type="wicri:doubleKey">0040-6090:1977:Arsalane M:the:thickness:dependence</idno><idno type="wicri:Area/Main/Merge">002B68</idno><idno type="wicri:Area/Main/Curation">002A88</idno><idno type="wicri:Area/Main/Exploration">002A88</idno><idno type="wicri:Area/France/Extraction">001673</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a">The thickness dependence of the interband transition photovoltaic voltage and the short-circuit photocurrent in zinc sulphide photocells</title><author><name sortKey="Arsalane, M" sort="Arsalane, M" uniqKey="Arsalane M" first="M." last="Arsalane">M. Arsalane</name><affiliation wicri:level="3"><country xml:lang="fr">France</country><wicri:regionArea>Université de Haute Normandie, Laboratoire d'Electronique et d'Automatique, B.P. 4006, 76077 Le Havre Cédex</wicri:regionArea><placeName><region type="region" nuts="2">Région Normandie</region><region type="old region" nuts="2">Haute-Normandie</region><settlement type="city">Le Havre Cédex</settlement></placeName></affiliation></author><author><name sortKey="Tosser, A J" sort="Tosser, A J" uniqKey="Tosser A" first="A. J." last="Tosser">A. J. Tosser</name><affiliation wicri:level="3"><country xml:lang="fr">France</country><wicri:regionArea>Université de Nancy-1, Laboratoire d'Electronique, Case Officialle 140, 54037 Nancy Cédex</wicri:regionArea><placeName><region type="region" nuts="2">Grand Est</region><region type="old region" nuts="2">Lorraine (région)</region><settlement type="city">Nancy Cédex</settlement></placeName></affiliation></author></analytic><monogr></monogr><series><title level="j">Thin Solid Films</title><title level="j" type="abbrev">TSF</title><idno type="ISSN">0040-6090</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1977">1977</date><biblScope unit="volume">42</biblScope><biblScope unit="issue">2</biblScope><biblScope unit="page" from="213">213</biblScope><biblScope unit="page" to="220">220</biblScope></imprint><idno type="ISSN">0040-6090</idno></series><idno type="istex">C5995C0259F97148C443977DEE01EBDE65F4DDF0</idno><idno type="DOI">10.1016/0040-6090(77)90419-9</idno><idno type="PII">0040-6090(77)90419-9</idno></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0040-6090</idno></seriesStmt></fileDesc><profileDesc><textClass></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Using previously proposed band models calculations are given to determine the open-circuit photovoltages Vpho and the short-circuit currents Iphsc that are induced by light with an energy of more than 3.66 eV in Al/ZnS/Au photocells. The assumption that the interband photo-transitions and the electronic photo-emission from coulombic centres are separate may be used for sulphide thicknesses of more than 200 Å; the variations of Vpho and Iphsc with light intensity are only attributed to the interband transition. For sulphide thicknesses less than 200 Å the conduction band is perturbed twice because of the critical layer; photo-emission from the coulombic centres is enhanced; experimental thickness dependences are proposed that deviate markedly from the theoretical laws.</div></front></TEI><affiliations><list><country><li>France</li></country><region><li>Grand Est</li><li>Haute-Normandie</li><li>Lorraine (région)</li><li>Région Normandie</li></region><settlement><li>Le Havre Cédex</li><li>Nancy Cédex</li></settlement></list><tree><country name="France"><region name="Région Normandie"><name sortKey="Arsalane, M" sort="Arsalane, M" uniqKey="Arsalane M" first="M." last="Arsalane">M. Arsalane</name></region><name sortKey="Tosser, A J" sort="Tosser, A J" uniqKey="Tosser A" first="A. J." last="Tosser">A. J. Tosser</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=$WICRI_ROOT/Wicri/France/explor/LeHavreV1/Data/France/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001673 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/France/Analysis/biblio.hfd -nk 001673 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= Wicri/France
|area= LeHavreV1
|flux= France
|étape= Analysis
|type= RBID
|clé= ISTEX:C5995C0259F97148C443977DEE01EBDE65F4DDF0
|texte= The thickness dependence of the interband transition photovoltaic voltage and the short-circuit photocurrent in zinc sulphide photocells
}}
| This area was generated with Dilib version V0.6.25. |  |